EPC2014C TRANS GAN 40V 10A BUMPED DIE
From EPC
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Datasheets | EPC2014C |
Drain to Source Voltage (Vdss) | 40V |
FET Feature | Standard |
FET Type | GaNFET N-Channel, Gallium Nitride |
Family | FETs - Single |
For Use With | 917-1101-ND - BOARD DEV FOR EPC2014C |
Gate Charge (Qg) @ Vgs | 2.5nC @ 5V |
Input Capacitance (Ciss) @ Vds | 300pF @ 20V |
Mounting Type | Surface Mount |
Online Catalog | N-Channel Logic Level Gate FETs |
Other Names | 917-1082-1 |
Package / Case | Die |
Packaging | Cut Tape (CT) |
Power - Max | - |
Product Photos | eGaN Series |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 10A, 5V |
Related Products | 732-3701-2-ND - FIXED IND 220NH 31A 0.325 MOHM 732-3701-1-ND - FIXED IND 220NH 31A 0.325 MOHM 732-3701-6-ND - FIXED IND 220NH 31A 0.325 MOHM |
Series | eGaN® |
Standard Package | 1 |
Supplier Device Package | Die Outline (5-Solder Bar) |
Vgs(th) (Max) @ Id | 2.5V @ 2mA |