EPC2014C
TRANS GAN 40V 10A BUMPED DIE

From EPC

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C10A (Ta)
DatasheetsEPC2014C
Drain to Source Voltage (Vdss)40V
FET FeatureStandard
FET TypeGaNFET N-Channel, Gallium Nitride
FamilyFETs - Single
For Use With917-1101-ND - BOARD DEV FOR EPC2014C
Gate Charge (Qg) @ Vgs2.5nC @ 5V
Input Capacitance (Ciss) @ Vds300pF @ 20V
Mounting TypeSurface Mount
Online CatalogN-Channel Logic Level Gate FETs
Other Names917-1082-1
Package / CaseDie
PackagingCut Tape (CT)
Power - Max-
Product PhotoseGaN Series
Rds On (Max) @ Id, Vgs16 mOhm @ 10A, 5V
Related Products732-3701-2-ND - FIXED IND 220NH 31A 0.325 MOHM 732-3701-1-ND - FIXED IND 220NH 31A 0.325 MOHM 732-3701-6-ND - FIXED IND 220NH 31A 0.325 MOHM
SerieseGaN®
Standard Package1
Supplier Device PackageDie Outline (5-Solder Bar)
Vgs(th) (Max) @ Id2.5V @ 2mA

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