EPC2015 TRANS GAN 40V 33A BUMPED DIE
From EPC
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |
Datasheets | EPC2015 Datasheet |
Drain to Source Voltage (Vdss) | 40V |
FET Feature | Logic Level Gate |
FET Type | GaNFET N-Channel, Gallium Nitride |
Family | FETs - Single |
Featured Product | eGaN™ FETs Demo Board EPC9101 |
For Use With | 917-1067-ND - BOARD DEV EPC2015/23 EGAN 917-1049-ND - DEV GAN 1/2 BRIDGE 2015 W/LM5113 |
Gate Charge (Qg) @ Vgs | 10.5nC @ 5V |
Input Capacitance (Ciss) @ Vds | 1100pF @ 20V |
Mfg Application Notes | Second Generation eGaN® FETs Assembling eGaN® FETs Using eGaN® FETs |
Mounting Type | Surface Mount |
Online Catalog | N-Channel Logic Level Gate FETs |
Other Names | 917-1019-6 |
PCN Assembly/Origin | EPC2yyy Family Process Change 12/Dec/2013 |
PCN Design/Specification | EPC20xx Material 10/Apr/2013 |
Package / Case | Die |
Packaging | Digi-Reel® |
Power - Max | - |
Product Photos | EPC2015 |
Product Training Modules | eGaN FET Reliability Second Gen Lead Free eGaN FETs Overview Paralleling eGaN® FETs Driving eGaN FETs with LM5113 |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 33A, 5V |
Reference Design Library | EPC9107: 3.3V @ 15A, 9 ~ 28V in |
Related Products | 732-3701-2-ND - FIXED IND 220NH 31A 0.325 MOHM 732-3701-1-ND - FIXED IND 220NH 31A 0.325 MOHM 732-3701-6-ND - FIXED IND 220NH 31A 0.325 MOHM |
RoHS Information | Lead Free/RoHS Statement |
Series | eGaN® |
Standard Package | 1 |
Supplier Device Package | Die Outline (11-Solder Bar) |
Vgs(th) (Max) @ Id | 2.5V @ 9mA |
Video File | EPC eGaN FETs -- Another Geek Moment | DigiKey |