EPC2015CENGR
TRANS GAN 40V 36A BUMPED DIE

From EPC

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C36A (Ta)
DatasheetsEPC2015C Preliminary Datasheet
Drain to Source Voltage (Vdss)40V
FET FeatureStandard
FET TypeGaNFET N-Channel, Gallium Nitride
FamilyFETs - Single
Gate Charge (Qg) @ Vgs8.7nC @ 5V
Input Capacitance (Ciss) @ Vds1000pF @ 20V
Mfg Application NotesAssembling eGaN® FETs Die Attach Procedure Die Removal Procedure Using eGaN® FETs
Mounting TypeSurface Mount
Online CatalogN-Channel Standard FETs
Other Names917-EPC2015CENGRTR
Package / CaseDie
PackagingTape & Reel (TR)
Power - Max-
Product PhotosEPC2015CENGR
Rds On (Max) @ Id, Vgs4 mOhm @ 33A, 5V
SerieseGaN®
Standard Package500
Supplier Device PackageDie Outline (11-Solder Bar)
Vgs(th) (Max) @ Id2.5V @ 9mA

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