EPC2016 TRANS GAN 100V 11A BUMPED DIE
From EPC
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Datasheets | EPC2016 |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| Family | FETs - Single |
| Featured Product | EPC2016 100 V eGaN® FET EPC9106 Class-D Audio Amplifier |
| For Use With | 917-1031-ND - BOARD DEV FOR EPC2016 |
| Gate Charge (Qg) @ Vgs | 4.1nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 480pF @ 50V |
| Mfg Application Notes | Assembling eGaN® FETs Die Attach Procedure Die Removal Procedure Using eGaN® FETs |
| Mounting Type | Surface Mount |
| Other Names | 917-1027-6 |
| PCN Assembly/Origin | EPC2yyy Family Process Change 12/Dec/2013 |
| Package / Case | Die |
| Packaging | Digi-Reel® |
| Power - Max | - |
| Product Photos | EPC2016_RY |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 11A, 5V |
| Reference Design Library | EPC9106: 250W(x2) @ 4O, ± 27V in, Class D |
| Series | eGaN® |
| Standard Package | 1 |
| Supplier Device Package | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
