EPC2016C TRANS GAN 100V 18A BUMPED DIE
From EPC
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Datasheets | EPC2016C |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| Family | FETs - Single |
| For Use With | 917-1094-ND - DEV BOARD EPC2016C 100V EGAN |
| Gate Charge (Qg) @ Vgs | 4.5nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 420pF @ 50V |
| Mfg Application Notes | Assembling eGaN® FETs Die Attach Procedure Die Removal Procedure Using eGaN® FETs |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | 917-1080-6 |
| Package / Case | Die |
| Packaging | Digi-Reel® |
| Power - Max | - |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 11A, 5V |
| Reference Design Library | EPC9106: 250W(x2) @ 4O, ± 27V in, Class D |
| Series | eGaN® |
| Standard Package | 1 |
| Supplier Device Package | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 5mA |
