EPC2018 TRANS GAN 150V 12A BUMPED DIE
From EPC
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Datasheets | EPC2018 Datasheet |
| Drain to Source Voltage (Vdss) | 150V |
| FET Feature | Standard |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| Family | FETs - Single |
| Featured Product | EPC2018 150 V eGaN® FET |
| Gate Charge (Qg) @ Vgs | 7.5nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 540pF @ 100V |
| Mfg Application Notes | Assembling eGaN® FETs Die Attach Procedure Die Removal Procedure Using eGaN® FETs |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | 917-1034-2 |
| PCN Assembly/Origin | EPC2yyy Family Process Change 14/Dec/2013 |
| Package / Case | Die |
| Packaging | Tape & Reel (TR) |
| Power - Max | - |
| Product Photos | EPC2018 |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 6A, 5V |
| Series | eGaN® |
| Standard Package | 500 |
| Supplier Device Package | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
