EPC2019 TRANS GAN 200V 9A BUMPED DIE
From EPC
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Datasheets | EPC2019 Datasheet |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Logic Level Gate |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | - |
| Input Capacitance (Ciss) @ Vds | 230pF @ 100V |
| Mfg Application Notes | Assembling eGaN® FETs Die Attach Procedure Die Removal Procedure Using eGaN® FETs |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | 917-1087-1 |
| PCN Assembly/Origin | EPC2yyy Family Process Change 14/Dec/2013 |
| Package / Case | Die |
| Packaging | Cut Tape (CT) |
| Power - Max | - |
| Product Photos | eGaN Series |
| Rds On (Max) @ Id, Vgs | 43 mOhm @ 7A, 5V |
| Series | eGaN® |
| Standard Package | 1 |
| Supplier Device Package | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 1.5mA |
