EPC2019ENG TRANS GAN 200V 45MO BUMPED DIE
From EPC
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Datasheets | EPC2019 Datasheet |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Standard |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| Family | FETs - Single |
| Featured Product | Gen 4 eGaN FETs |
| For Use With | 917-1056-ND - BOARD DEV FOR EPC2019 200V EGAN |
| Gate Charge (Qg) @ Vgs | - |
| Input Capacitance (Ciss) @ Vds | 230pF @ 100V |
| Mounting Type | Surface Mount |
| Other Names | 917-1055-6 |
| Package / Case | Die |
| Packaging | Digi-Reel® |
| Power - Max | - |
| Product Photos | EPC2019ENG |
| Rds On (Max) @ Id, Vgs | 43 mOhm @ 7A, 5V |
| Series | eGaN® |
| Standard Package | 1 |
| Supplier Device Package | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 1.5mA |
