VT50N3 Photoconductive Cell; 32 Kilohms (Typ.); 1 Megohms (Min.); 0.80 (Typ.); 500 mW
From Excelitas Technologies Sensors
| Diameter, Lead | 0.016 in. |
| Dimensions | 0.545 to 0.650 in. L x 0.190 to 0.230 in. H x 0.420 to 0.440 in. I.D. |
| Gamma | 0.80 (Typ.) |
| Length, Lead | 1.0 in. (Min.) |
| Package Type | TO-8 |
| Power Dissipation | 500 mW |
| Resistance | 32 K (1 fc) |
| Resistance, Dark | 1 M |
| Resistance, Light | 32 Kiloohms (Typ.) |
| Temperature, Operating, Maximum | 75 °C |
| Temperature, Operating, Minimum | -40 °C |
| Time, Fall | 8 ms (Typ.) @ 1 fc |
| Time, Rise | 78 ms (Typ.) @ 1 fc |
| Voltage, Rating | 300 V peak |
