VTB8341H SILICON PHOTODIODES
From Excelitas Technologies Sensors
| Active Area | 0.008 sq.in. |
| Angle, Response | ±60 ° |
| Capacitance, Junction | 1 nF |
| Current, Dark | 100 pA |
| Current, Short Circuit | 60 μA |
| Package Type | Case 11 |
| Primary Type | Photo |
| Resistance, Shunt | 1.4 Gigaohms |
| Spectral Application Range | 320 to 1100 nm |
| Spectral Sensitivity | 0.1 A/W |
| Temperature, Operating | -20 to +75 °C |
| Voltage, Breakdown | 40 V |
| Voltage, Open Circuit | 490 mV |
