VTP3310LAH
SILICON PHOTODIODES

From Excelitas Technologies Sensors

Active Area0.0011 sq.in.
Angle, Response±20 °
Capacitance, Junction25 pF
Current, Dark35 nA
Current, Short Circuit36 μA
Package TypeT-1
Primary TypePhoto
Resistance, Shunt10 Gigaohms
Spectral Application Range400 to 1150 nm
Spectral Sensitivity0.55 A/W
Temperature, Operating-40 to +100 °C
Voltage, Breakdown140 V
Voltage, Open Circuit350 mV

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