{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Chassis Mount","Family":"FETs - Modules","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package \/ Case":"SOT-227-4, miniBLOC","Supplier Device Package":"SOT-227B","Rds On (Max) @ Id, Vgs":"80 mOhm @ 34A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"625W","Standard Package":"10","Input Capacitance (Ciss) @ Vds":"10000pF @ 25V","Drain to Source Voltage (Vdss)":"500V","...

{"Terminal Form":"UNSPECIFIED","Avalanche Energy Rating (Eas)":"725 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"57 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"228 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Avalanche Energy Rating (Eas)":"725 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"57 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"228 A","Channel Type":"N-CHANNEL",...

{"Status":"Discontinued"}...