Product Datasheet Search Results:

FK10VS-10-T1.pdf5 Pages, 202 KB, Scan
FK10VS-10-T1
Mitsubishi Electric & Electronics Usa, Inc.
10 A, 500 V, 1.13 ohm, N-CHANNEL, Si, POWER, MOSFET
FK10VS-10-T2.pdf5 Pages, 202 KB, Scan
FK10VS-10-T2
Mitsubishi Electric & Electronics Usa, Inc.
10 A, 500 V, 1.13 ohm, N-CHANNEL, Si, POWER, MOSFET
FK10VS-10.pdf5 Pages, 61 KB, Original
FK10VS-10
Mitsubishi Electric Semiconductor
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FK10VS-10.pdf1 Pages, 65 KB, Scan
FK10VS-10
Powerex, Inc. - Pa
10 A, 500 V, 1.13 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Mitsubishichips.com/FK10VS-10-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.13 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Application":"SWITCHING","Surface...
1505 Bytes - 07:17:30, 01 November 2024
Mitsubishichips.com/FK10VS-10-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.13 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Application":"SWITCHING","Surface...
1503 Bytes - 07:17:30, 01 November 2024
Pwrx.com/FK10VS-10
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.13 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Application":"SWITCHING","Surface...
1422 Bytes - 07:17:30, 01 November 2024

Documentation and Support

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HPVS-10-10-A.pdf0.671Request