{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"3 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"REC...

{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Transistor Application":"SWITCHING","Surface ...

{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Transistor Application":"SWITCHING","Surface ...