2MBI100U4A-120-50 IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module
From FUJI ELECTRIC
Collector Emitter Voltage V(br)ceo: | 1.2 kV |
Collector Emitter Voltage Vces: | 2.2 V |
DC Collector Current: | 150 A |
No. of Pins: | 7 |
Operating Temperature Max: | 125 °C |
Operating Temperature Min: | -40 °C |
Power Dissipation Pd: | 540 W |
SVHC: | To Be Advised |
Transistor Case Style: | Module |
Transistor Polarity: | N Channel |