2MBI150U4A-120-50 IGBT Array & Module Transistor, N Channel, 200 A, 2.3 V, 735 W, 1.2 kV, Module
From FUJI ELECTRIC
| Collector Emitter Voltage V(br)ceo: | 1.2 kV |
| Collector Emitter Voltage Vces: | 2.3 V |
| DC Collector Current: | 200 A |
| No. of Pins: | 7 |
| Operating Temperature Max: | 150 °C |
| Power Dissipation Pd: | 735 W |
| SVHC: | To Be Advised |
| Transistor Case Style: | Module |
| Transistor Polarity: | N Channel |
