FLM6472-3B
N-Channel UHF-Microwave MESFET

From Fujitsu

StatusDiscontinued
@Freq. (Hz) (Test Condition)7.2G
@I(D) (A) (Test Condition)1.4
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)3
I(D) Abs. Drain Current (A)2.8
I(DSS) Max. (A)2.8
I(DSS) Min. (A)2.2
Operating Power Output Typ.(W)36
P(D) Max.(W) Power Dissipation21
PackageRFMOD
Power Gain Min. (dB)5
Semiconductor MaterialGaAs
V(BR)DSS (V)15
V(BR)GSS (V)-5
V(GS)off Max. (V)-3
g(fs) Max, (S) Trans. conduct,850m
g(fs) Min. (S) Trans. conduct.600m

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