{"Mounting Style":"SMD\/SMT","Vds - Drain-Source Breakdown Voltage":"650 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"560 mOhms","Channel Mode":"Enhancement","Maximum Operating Temperature":"+ 150 C","Brand":"GaN Systems","Id - Continuous Drain Current":"7 A","Vgs th - Gate-Source Threshold Voltage":"1.6 V","Packaging":"Tray","Product Category":"MOSFET","Qg - Gate Charge":"1.7 nC","Vgs - Gate-Source Breakdown Voltage":"+\/- 10 V","Configuration":"Single","Technology":"GaN","Minim...