{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Modules","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"-","Package \/ Case":"ISOPLUS-DIL\u2122","Supplier Device Package":"ISOPLUS-DIL\u2122","Datasheets":"GWM160-0055P3","Rds On (Max) @ Id, Vgs":"3 mOhm @ 100A, 10V","FET Type":"6 N-Channel (3-Phase Bridge)","Packaging":"Tube","Power - Max":"-","Standard Package":"20","Drain to Source Voltage (Vdss)":"55V","Current - Continuous Drain (Id) @ 25...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"160 A","EU RoHS Compliant":"Yes","Configuration":"BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0029 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 ...