GS66506T-E01-TY MOSFET 650V 22A E-Mode GaN Preproduction Units
From GaN Systems
| Brand | GaN Systems |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 22 A |
| Manufacturer | GaN Systems |
| Mounting Style | SMD/SMT |
| Packaging | Tray |
| Product Category | MOSFET |
| Qg - Gate Charge | 4.9 nC |
| Rds On - Drain-Source Resistance | 73 mOhms |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Vgs - Gate-Source Breakdown Voltage | +/- 10 V |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
