Hitachi.co.jp/HE8807SG
{"P(O)rad Min.(W)Rad. Out. Power":"10m","V(R) Max.(V) Reverse Voltage":"3.0","I(F) Max. (A) Forward Current":"200m","Semiconductor Material":"GaAlAs","Package":"Can-4.7","t(resp) Max.(s) Response Time":"20n","Peak Wavelength (m)":"800n","Spectral Bandwidth (m)":"60n","@I(F) (A) (Test Condition)":"150m","V(F) Max.(V) Forward Voltage":"2.3"}...
823 Bytes - 16:51:44, 04 May 2024
Opnext/HE8807SG
{"Test Current (It)":"150 mA","Forward Current":"200 mA","Mounting":"Through Hole","Product Height (mm)":"2.7 mm","Forward Voltage":"2.3 V","Reverse Voltage":"3 V","Operating Temperature Classification":"Commercial","Operating Temp Range":"-20C to 85C","Product Depth (mm)":"5.4 mm","Main Category":"IrLED","Rad Hardened":"No","Shape Type":"Circular","Chip Material":"GaAlAs","Peak Wavelength":"880 nm","Type":"IrLED","Pin Count":"2","Number of Elements":"1","Product Length (mm)":"5.4 mm"}...
1215 Bytes - 16:51:44, 04 May 2024