HY531000S10 General Purpose Dynamic RAM - 512/8ms refresh
From Hyundai Semiconductor
| Bits Per Word | 1 |
| Military | N |
| Nom. Supp (V) | 5.0 |
| Number of Words | 1M |
| Output Config | 3-State |
| P(D) Max.(W) Power Dissipation | 0.6 |
| Package | DIP |
| Pins | 18 |
| Technology | CMOS |
| t(acc) Max. (S) | 100n |
| tW Min (S) | 180n |
