HY531000S60
General Purpose Dynamic RAM - 512/8ms refresh

From Hyundai Semiconductor

Bits Per Word1
MilitaryN
Nom. Supp (V)5.0
Number of Words1M
Output Config3-State
P(D) Max.(W) Power Dissipation0.6
PackageDIP
Pins18
TechnologyCMOS
t(acc) Max. (S)60n
tW Min (S)120n

External links