{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"IXFN HiPerFET\u2122 MOSFET Series","Product Photos":"SOT-227-4, miniBLOC","Family":"FETs - Modules","Vgs(th) (Max) @ Id":"4V @ 8mA","Series":"-","Standard Package":"10","Supplier Device Package":"SOT-227B","Datasheets":"IXFN230N10","Rds On (Max) @ Id, Vgs":"6 mOhm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"700W","Package \/ Case":"SOT-227-4, miniBLOC","Mounting Type":"Chas...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"230(A)","Mounting":"Screw","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Power Dissipation":"700(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-227B","Type":"Power MOSFET","Pin Count":"4","Number of Elements":"1"}...

{"Terminal Finish":"NICKEL","Terminal Form":"UNSPECIFIED","Avalanche Energy Rating (Eas)":"4000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"230 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0060 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"920 A","Channel Type":"N-CHANNEL","FET ...