{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-227-4, miniBLOC","Family":"FETs - Modules","Vgs(th) (Max) @ Id":"6.5V @ 1mA","Series":"Polar\u2122","Standard Package":"10","Supplier Device Package":"SOT-227B","Datasheets":"IXFN32N120P","Rds On (Max) @ Id, Vgs":"310 mOhm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"1000W","Package \/ Case":"SOT-227-4, miniBLOC","Mounting Type":"Chassis Mount","Drain to Source Voltage (...

{"Terminal Finish":"NICKEL","Terminal Form":"UNSPECIFIED","Avalanche Energy Rating (Eas)":"2000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET T...