BSC190N12NS3G
8.6 A, 120 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET

From Infineon Technologies AG

StatusACTIVE
Avalanche Energy Rating (Eas)60 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min120 V
Drain Current-Max (ID)8.6 A
Drain-source On Resistance-Max0.0190 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionGREEN, PLASTIC, TDSON-8
Number of Elements1
Number of Terminals5
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)176 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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