2N6845PBF
2.5 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)115 mJ
Channel TypeP-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)2.5 A
Drain-source On Resistance-Max1.2 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Pulsed Drain Current-Max (IDM)16 A
Terminal FinishNOT SPECIFIED
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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