IRF7303TR
4 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusEOL/LIFEBUY
Channel TypeN-CHANNEL
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)4 A
Drain-source On Resistance-Max0.0500 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements2
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max1.4 W
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links