IRFY9120(M)
100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA

From International Rectifier

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min100 V
Drain-source On Resistance-Max0.6000 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeSQUARE
Package StyleFLANGE MOUNT
Terminal FinishTIN LEAD
Terminal FormPIN/PEG
Terminal PositionSINGLE
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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