IRFY9120EC
5.3 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB

From International Rectifier

StatusACTIVE
Case ConnectionISOLATED
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)5.3 A
Drain-source On Resistance-Max0.6900 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeSQUARE
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)21 A
Terminal FinishTIN LEAD
Terminal FormPIN/PEG
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links