JANTXV2N6798U
5.5 A, 200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)98 mJ
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)5.5 A
Drain-source On Resistance-Max0.4600 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHERMETIC SEALED, LCC-18
Number of Elements1
Number of Terminals15
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleCHIP CARRIER
Pulsed Drain Current-Max (IDM)22 A
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormNO LEAD
Terminal PositionQUAD
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links