{"Lead Length:":"125 mm","Sensing Temperature Max:":"+500 \u00b0C","Sensing Temperature Min:":"0 \u00b0C","Sensor Body Material:":"Nickel Aluminium, Nickel Chromium","SVHC:":"No SVHC (17-Dec-2014)","Thermocouple Type:":"K"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"40 V","Typical Rise Time":"5.2 ns","Typical Turn-Off Delay Time":"30 ns","Description":"Value","Maximum Continuous Drain Current":"40 A","Package":"5LFPAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"10 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"4.9@10V mOhm","Manufacturer":"Renesas Electronics","Typical Fall Time":"6.5 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"-","Package \/ Case":"SC-100, SOT-669","Current - Continuous Drain (Id) @ 25\u00b0C":"40A (Ta)","Gate Charge (Qg) @ Vgs":"25nC @ 10V","Product Photos":"5-LFPAK, SC-100","PCN Assembly\/Origin":"Wafer Fabrication Site Change 02\/Oct\/2013 Power Transistors Relocation 12\/Nov\/2013","Rds On (Max) @ Id, Vgs":"4.9 mOhm @ 20A, 10V","Datasheets":"RJK0454DPB","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1"...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"40 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0049 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"160 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...