{"Category":"Discrete Semiconductor Products","Current - Max":"20mA","Family":"RF Diodes","Standard Package":"100","Series":"-","Capacitance @ Vr, F":"0.12pF @ 0V, 18GHz","Resistance @ If, F":"-","Voltage - Peak Reverse (Max)":"5V","Product Training Modules":"Heterolithic Microwave Integrated Circuit Products","Supplier Device Package":"Die","Packaging":"Tape & Reel (TR)","Datasheets":"MA4E2502 Series","Package \/ Case":"Die","Power Dissipation (Max)":"50mW","Diode Type":"Schottky","Other Names":"1465-1028"...

{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Mfr Package Description":"CASE 1246, 2 PIN","Frequency Band":"KU BAND","Terminal Form":"NO LEAD","CW RF Incident Power-Max":"0.1000 W","Package Style":"CHIP CARRIER","Diode Capacitance-Max":"0.1200 pF","Diode Element Material":"SILICON","Number of Elements":"1","Type of Schottky Barrier":"LOW BARRIER","Terminal Position":"BOTTOM","Diode Type":"MIXER DIODE","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Technology":"SCHOTTKY","Number of Termi...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"UNSPECIFIED","Mfr Package Description":"CASE 1246, 2 PIN","Frequency Band":"KU BAND","Terminal Form":"NO LEAD","CW RF Incident Power-Max":"0.1000 W","Package Style":"CHIP CARRIER","Diode Capacitance-Max":"0.1200 pF","Diode Element Material":"SILICON","Number of Elements":"1","Type of Schottky Barrier":"LOW BARRIER","Terminal Position":"BOTTOM","Diode Type":"MIXER DIODE","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Techn...