MA4AGFCP910-W
50 V, GALLIUM ARSENIDE, PIN DIODE

From M/A-COM Technology Solutions, Inc.

StatusACTIVE
ApplicationSWITCHING
Breakdown Voltage-Min50 V
ConfigurationSINGLE
Diode Capacitance-Max0.0210 pF
Diode Element MaterialGALLIUM ARSENIDE
Diode Forward Resistance-Max6 ohm
Diode TypePIN DIODE
Frequency BandMILLIMETER WAVE BAND
Mfr Package DescriptionFLIP CHIP-2
Minority Carrier Lifetime-Nom4 us
Number of Elements1
Number of Terminals2
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleUNCASED CHIP
Power Dissipation Limit-Max0.0500 W
Surface MountYes
TechnologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal FinishNOT SPECIFIED
Terminal FormNO LEAD
Terminal PositionUPPER

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