MA4GP03231
100 V, GALLIUM ARSENIDE, PIN DIODE

From M/A-COM Technology Solutions, Inc.

StatusACTIVE
ApplicationSWITCHING
Breakdown Voltage-Min100 V
ConfigurationSINGLE
Diode Capacitance-Max0.1200 pF
Diode Element MaterialGALLIUM ARSENIDE
Diode Forward Resistance-Max1.5 ohm
Diode TypePIN DIODE
Frequency BandKA BAND
Minority Carrier Lifetime-Nom0.0250 us
Number of Elements1
Number of Terminals2
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleMICROWAVE
Power Dissipation Limit-Max0.2500 W
Surface MountYes
TechnologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal FormNO LEAD
Terminal PositionEND

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