APT10050JVFR 19 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
From Microsemi Corp.
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 2500 mJ |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1000 V |
| Drain Current-Max (ID) | 19 A |
| Drain-source On Resistance-Max | 0.5000 ohm |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Lead Free | Yes |
| Mfr Package Description | ISOTOP-4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Pulsed Drain Current-Max (IDM) | 76 A |
| Terminal Finish | TIN SILVER COPPER |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
