GMV2114-GM1 C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
From Microsemi Corp.
| Status | ACTIVE |
| Breakdown Voltage-Min | 22 V |
| Configuration | SINGLE |
| Diode Capacitance Ratio-Min | 3.3 |
| Diode Element Material | SILICON |
| Diode Type | VARIABLE CAPACITANCE DIODE |
| Frequency Band | C BAND |
| Mfr Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Quality Factor-Min | 900 |
| Surface Mount | Yes |
| Terminal Finish | MATTE TIN |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Variable Capacitance Diode Classification | HYPERABRUPT |
