VRF161 Trans RF MOSFET N-CH 170V 20A Box
From MICROSEMI
Channel Mode | Enhancement |
Channel Type | N |
Continuous Drain Current | 20(A) |
Drain Efficiency (Typ) | 50(%) |
Drain Source Voltage (Max) | 170(V) |
Forward Transconductance (Typ) | 8.1(S) |
Frequency (Max) | 150(MHz) |
Input Capacitance (Typ)@Vds | 500@150V(pF) |
Number of Elements | 1 |
Operating Temp Range | -65C to 200C |
Output Capacitance (Typ)@Vds | 180@150V(pF) |
Output Power (Max) | 200 |
Packaging | Box |
Power Dissipation (Max) | 350000(mW) |
Power Gain (Typ)@Vds | 24(dB) |
Rad Hardened | No |
Reverse Capacitance (Typ) | 20@150V(pF) |
Screening Level | Military |