M5M44409TP12 Special Application Memory Device - 1Mx4 DRAM, w/ 4Kx4 SRAM CACHE.
From Mitsubishi Electric Semiconductor
| Bits Per Word | 4 |
| Military | N |
| Number of Words | 1M |
| Package | TSOP |
| Pins | 44 |
| Technology | CMOS |
| Vsup Nom.(V) Supply Voltage | 5 |
| t(a) Max. (s) Access Time | 12n |
