{"Factory Pack Quantity":"50","Vds - Drain-Source Breakdown Voltage":"4 V","Transistor Polarity":"N-Channel","Package \/ Case":"FTSMM-4 (M04)","Mounting Style":"SMD\/SMT","Product Category":"RF JFET Transistors","Vgs - Gate-Source Breakdown Voltage":"- 3 V","Brand":"CEL","Gain":"17.5 dB","Maximum Operating Temperature":"+ 150 C","Manufacturer":"CEL","Transistor Type":"HFET","Forward Transconductance - Min":"80 mS","Id - Continuous Drain Current":"60 mA","RoHS":"Details","Gate-Source Cutoff Voltage":"- 0.5 V...

{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"16 dB","Drain Current-Max (ID)":"0.0200 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"HETERO-JUNCTION","DS Breakdown Voltage-Min":"3 V","Transistor Application":"AMPLIF...