2SK991 N-Channel Enhancement MOSFET
From NEC Electronics
@(VDS) (V) (Test Condition) | 15 |
@I(D) (A) (Test Condition) | 2.0 |
@V(DS) (V) (Test Condition) | 10 |
Absolute Max. Power Diss. (W) | 35 |
C(iss) Max. (F) | 360p |
I(D) Abs. Drain Current (A) | 4.0 |
Military | N |
Package | TO-220 |
V(BR)DSS (V) | 100 |
V(BR)GSS (V) | 15 |
g(fs) Min. (S) Trans. conduct. | 1.0 |
r(DS)on Max. (Ohms) | 0.7 |