IXDR30N120
IGBT Single Transistor, Isolated, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3

From IXYS SEMICONDUCTOR

Collector Emitter Voltage V(br)ceo:1.2 kV
Collector Emitter Voltage Vces:2.4 V
DC Collector Current:50 A
MSL:-
No. of Pins:3
Operating Temperature Max:150 °C
Operating Temperature Min:-55 °C
Power Dissipation Pd:200 W
SVHC:To Be Advised
Transistor Case Style:TO-247AD
Transistor Type:IGBT

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