2SK2011
12 A, 250 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML

From ON Semiconductor L.L.C.

StatusACTIVE
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min250 V
Drain Current-Max (ID)12 A
Drain-source On Resistance-Max0.3500 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTO-220ML, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeDEPLETION
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Power Dissipation Ambient-Max2 W
Pulsed Drain Current-Max (IDM)48 A
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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