HGT1S10N120BNST Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
From ON SEMICONDUCTOR
| Channel Type | N |
| Collector Current (DC) | 35(A) |
| Configuration | Single |
| Gate to Emitter Voltage (Max) | '±20(V) |
| Mounting | Surface Mount |
| Operating Temperature (Max) | 150C |
| Operating Temperature (Min) | -55C |
| Operating Temperature Classification | Military |
| Package Type | D2PAK |
| Packaging | Tape and Reel |
| Pin Count | 2 +Tab |
| Rad Hardened | No |
