{"C(iss) Max. (F)":"2.4n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"230","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"15.5","Package":"TO-3","Military":"N","r(DS)on Max. (Ohms)":"400m"}...

{"C(iss) Max. (F)":"2.95n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"310","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"19","Package":"TO-247AD","Military":"N","r(DS)on Max. (Ohms)":"400m"}...

{"@V(DS) (V) (Test Condition)":"1k","Package":"Chip","I(DSS) Max. (A)":"250u","I(GSS) Max. (A)":"100n","V(BR)DSS (V)":"600","@I(D) (A) (Test Condition)":"1","Military":"N","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"400m","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2"}...

{"C(iss) Max. (F)":"2.95n","Absolute Max. Power Diss. (W)":"250","Package":"TO-258iso","V(BR)DSS (V)":"600","I(D) Abs. Drain Current (A)":"16.5","Military":"N","r(DS)on Max. (Ohms)":"400m"}...

{"C(iss) Max. (F)":"2.95n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"230","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"14.5","Package":"TO-3","Military":"N","r(DS)on Max. (Ohms)":"450m"}...

{"C(iss) Max. (F)":"2.95n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"310","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"19","Package":"TO-247","Military":"N","r(DS)on Max. (Ohms)":"450m"}...

{"C(iss) Max. (F)":"2.95n","Absolute Max. Power Diss. (W)":"250","Package":"TO-258iso","V(BR)DSS (V)":"600","I(D) Abs. Drain Current (A)":"15.5","Military":"N","r(DS)on Max. (Ohms)":"450m"}...

{"V(CE)sat Max.(V)":"500m","P(D) Max.(W) Power Dissipation":"250m","CTR Min.(%)Current Trans.Ratio":"20","V(F) Max.(V) Forward Voltage":"1.5","Status":"Discontinued","I(C) Abs.(A) Collector Current":"25m","t(resp) Max.(s) Response Time":"3.0u","Number of Channels":"1","Package":"DIP","@V(CE) (V) (Test Condition)":"10","V(BR)CEO (V) Breakdown Voltage":"100","@I(F) (A) (Test Condition)":"10m","Military":"N","@I(C) (A) (Test Condition)":"1.0m","Viso Max.(V) Isolation Voltage":"1.5k","I(F) Max. (A) Forward Curr...

{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Mfr Package Description":"6 PIN","Input Cont Forward Current-Max":"60 mA","Current Transfer Ratio-Nom":"50 %","Optoelectronic Device Type":"AC INPUT-DARLINGTON OUTPUT","Isolation Voltage-Max":"5000 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"72 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"18 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Packag...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...

{"Terminal Finish":"TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"16(A)","Mounting":"Through Hole","Drain-Source On-Volt":"600(V)","Packaging":"Rail\/Tube","Power Dissipation":"250(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL"...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL"...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-247, 3 PIN","Pulsed Drain Current-Max (IDM)":"60 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"960 mJ","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWE...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT PACKAGE-3","Pulsed Drain Current-Max (IDM)":"60 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"960 mJ","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...

{"Terminal Finish":"TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...

{"Terminal Finish":"TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdow...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdow...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdow...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdow...

{"Category":"Transistor, Darlington Transistor","Amps":"8A","MHz":"<1 MHz","Volts":"100V"}...

{"Collector Current (DC) ":"6(A)","Transistor Polarity":"NPN","Power Dissipation":"25(W)","Mounting":"Surface Mount","Emitter-Base Voltage":"7(V)","Rad Hardened":"No","Category ":"Bipolar Power","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Frequency":"153(TYP)(MHz)","Package Type":"LFPAK","Collector-Base Voltage":"40(V)","Output Power":"Not Required(W)","Pin Count":"4 +Tab","Number of Elements":"1"}...

{"Collector Current (DC) ":"6(A)","Transistor Polarity":"PNP","Power Dissipation":"25(W)","Mounting":"Surface Mount","Emitter-Base Voltage":"8(V)","Rad Hardened":"No","Category ":"Bipolar Power","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Frequency":"110(MHz)","Package Type":"LFPAK","Collector-Base Voltage":"40(V)","Output Power":"Not Required(W)","Pin Count":"4 +Tab","Number of Elements":"1"}...

{"Collector Current (DC) ":"10(A)","Transistor Polarity":"NPN","Category ":"Bipolar Power","Mounting":"Surface Mount","Emitter-Base Voltage":"7(V)","Operating Temp Range":"-55C to 175C","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Frequency":"128(TYP)(MHz)","Package Type":"LFPAK","Collector-Base Voltage":"40(V)","Output Power":"Not Required(W)","Power Dissipation":"25(W)","Pin Count":"4 +Tab","Number of Elements":"1"}...

{"Collector Current (DC) ":"10(A)","Transistor Polarity":"PNP","Category ":"Bipolar Power","Mounting":"Surface Mount","Emitter-Base Voltage":"8(V)","Operating Temp Range":"-55C to 175C","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Frequency":"97(TYP)(MHz)","Package Type":"LFPAK","Collector-Base Voltage":"40(V)","Output Power":"Not Required(W)","Power Dissipation":"25(W)","Pin Count":"4 +Tab","Number of Elements":"1"}...

{"Collector Current (DC) ":"15(A)","Transistor Polarity":"NPN","Power Dissipation":"25(W)","Mounting":"Surface Mount","Emitter-Base Voltage":"7(V)","Rad Hardened":"No","Category ":"Bipolar Power","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Frequency":"105(TYP)(MHz)","Package Type":"LFPAK","Collector-Base Voltage":"40(V)","Output Power":"Not Required(W)","Pin Count":"4 +Tab","Number of Elements":"1"}...

{"Collector Current (DC) ":"15(A)","Transistor Polarity":"PNP","Power Dissipation":"25(W)","Mounting":"Surface Mount","Emitter-Base Voltage":"8(V)","Rad Hardened":"No","Category ":"Bipolar Power","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Frequency":"80(MHz)","Package Type":"LFPAK","Collector-Base Voltage":"40(V)","Output Power":"Not Required(W)","Pin Count":"4 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"6A","Online Catalog":"NPN Transistors","Transistor Type":"NPN","Frequency - Transition":"153MHz","Product Photos":"LFPAK-4, SOT669","Vce Saturation (Max) @ Ib, Ic":"380mV @ 300mA, 6A","Current - Collector Cutoff (Max)":"100nA","Series":"-","Package \/ Case":"SC-100, SOT-669, 4-LFPAK","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"LFPAK56, Power-SO8","Packaging":"Digi-Reel\u00ae","Datasheets":"PHPT...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"6A","Online Catalog":"PNP Transistors","Transistor Type":"PNP","Frequency - Transition":"110MHz","Product Photos":"LFPAK-4, SOT669","Vce Saturation (Max) @ Ib, Ic":"540mV @ 300mA, 6A","Current - Collector Cutoff (Max)":"100nA","Series":"-","Package \/ Case":"SC-100, SOT-669, 4-LFPAK","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"LFPAK56, Power-SO8","Packaging":"Tape & Reel (TR)","Datasheets":"PHP...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"10A","Online Catalog":"NPN Transistors","Transistor Type":"NPN","Frequency - Transition":"128MHz","Product Photos":"LFPAK-4, SOT669","Vce Saturation (Max) @ Ib, Ic":"460mV @ 500mA, 10A","Current - Collector Cutoff (Max)":"100nA","Series":"-","Package \/ Case":"SC-100, SOT-669, 4-LFPAK","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"LFPAK56, Power-SO8","Packaging":"Cut Tape (CT)","Datasheets":"PHPT...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"10A","Online Catalog":"PNP Transistors","Transistor Type":"PNP","Frequency - Transition":"97MHz","Product Photos":"LFPAK-4, SOT669","Vce Saturation (Max) @ Ib, Ic":"800mV @ 500mA, 10A","Current - Collector Cutoff (Max)":"100nA","Series":"-","Package \/ Case":"SC-100, SOT-669, 4-LFPAK","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"LFPAK56, Power-SO8","Packaging":"Tape & Reel (TR)","Datasheets":"PH...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"15A","Transistor Type":"NPN","Frequency - Transition":"105MHz","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 1.5A, 15A","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"*","Packaging":"*","Datasheets":"PHPT60415NY","Power - Max":"1.5W","Package \/ Case":"*","Mounting Type":"*","DC Current ...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"15A","Transistor Type":"PNP","Frequency - Transition":"80MHz","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"850mV @ 1.5A, 15A","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"1,500","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"*","Packaging":"*","Datasheets":"PHPT60415PY","Power - Max":"1.5W","Package \/ Case":"*","Mounting Type":"*","DC Curre...