2SJ319S 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET
From Renesas Electronics
| Status | DISCONTINUED |
| Case Connection | DRAIN |
| Channel Type | P-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (ID) | 3 A |
| Drain-source On Resistance-Max | 2.3 ohm |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Lead Free | Yes |
| Mfr Package Description | DPAK-3 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Pulsed Drain Current-Max (IDM) | 12 A |
| Surface Mount | Yes |
| Terminal Finish | TIN BISMUTH |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
