UPD44164094AF5-E40Y-EQ2-A
2M X 9 DDR SRAM, 0.45 ns, PBGA165

From Renesas Electronics

StatusACTIVE
Access Time-Max (tACC)0.4500 ns
EU RoHS CompliantYes
Lead FreeYes
Memory Density1.89E7 deg
Memory IC TypeDDR SRAM
Memory Width9
Mfr Package Description13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
Number of Functions1
Number of Terminals165
Number of Words2.10E6 words
Number of Words Code2M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min-40 Cel
Organization2M X 9
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)1.9 V
Supply Voltage-Min (Vsup)1.7 V
Supply Voltage-Nom (Vsup)1.8 V
Surface MountYes
TechnologyCMOS
Temperature GradeINDUSTRIAL
Terminal FinishTIN SILVER COPPER
Terminal FormBALL
Terminal Pitch1 mm
Terminal PositionBOTTOM

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