UPD44165084AF5-E50-EQ2-A
2M X 8 QDR SRAM, 0.45 ns, PBGA165

From Renesas Electronics

StatusACTIVE
Access Time-Max (tACC)0.4500 ns
China RoHS CompliantYes
EU RoHS CompliantYes
Lead FreeYes
Memory Density1.68E7 deg
Memory IC TypeQDR SRAM
Memory Width8
Mfr Package Description13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
Number of Functions1
Number of Terminals165
Number of Words2.10E6 words
Number of Words Code2M
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization2M X 8
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)1.9 V
Supply Voltage-Min (Vsup)1.7 V
Supply Voltage-Nom (Vsup)1.8 V
Surface MountYes
TechnologyCMOS
Temperature GradeCOMMERCIAL
Terminal FinishTIN SILVER COPPER
Terminal FormBALL
Terminal Pitch1 mm
Terminal PositionBOTTOM

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