NBT-168-T3
0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER

From RF Micro Devices, Inc. (RFMD)

StatusDISCONTINUED
Characteristic Impedance50 ohm
ConstructionCOMPONENT
Input Power-Max (CW)10 dBm
Mfr Package DescriptionCERAMIC, BOWTIE, MPGA-9
Operating Frequency-Max12000 MHz
Operating Frequency-Min0.0 MHz
Operating Temperature-Max85 Cel
Operating Temperature-Min-45 Cel
RF/Microwave Device TypeWIDE BAND HIGH POWER
Terminal FinishNOT SPECIFIED

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