{"Terminal Finish":"TIN\/SILVER","Terminal Form":"UNSPECIFIED","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"200 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0085 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"600 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...

{"C(iss) Max. (F)":"13n","t(r) Max. (s) Rise time":"500n","Package":"Module-s\/q","V(BR)DSS (V)":"100","Circuits Per Package":"1","t(f) Max. (s) Fall time.":"600n","I(D) Abs. Drain Current (A)":"130"}...